Semiconductor device and method of forming stress relieving vias for improved fan-out WLCSP package

摘要

A semiconductor device includes a semiconductor die. An encapsulant is disposed around the semiconductor die to form a peripheral area. An interconnect structure is formed over a first surface of the semiconductor die and encapsulant. A plurality of vias is formed partially through the peripheral area of the encapsulant and offset from the semiconductor die. A portion of the encapsulant is disposed over a second surface of the semiconductor die opposite the first surface. The plurality of vias comprises a depth greater than a thickness of the portion of the encapsulant. A first portion of the plurality of vias is formed in a row offset from a side of the semiconductor die. A second portion of the plurality of vias is formed as an array of vias offset from a corner of the semiconductor die. A repair material disposed within the plurality of vias.

主权项

1. A semiconductor device, comprising:
a semiconductor die; an encapsulant disposed over the semiconductor die and physically contacting a first surface of the semiconductor die; an interconnect structure formed over a first surface of the encapsulant and over an active surface of the semiconductor die opposite the first surface of the semiconductor die; and a plurality of vias formed partially through a second surface of the encapsulant opposite the first surface of the encapsulant with a portion of the encapsulant remaining between the vias and the first surface of the encapsulant, wherein a first area of the second surface of the encapsulant at a corner of the semiconductor device includes a greater number of the vias than a second area of the second surface of the encapsulant equal in size to the first area, the second area extending from a side surface of the semiconductor die to an edge of the semiconductor device.