Semiconductor light emitting element and method for manufacturing same

摘要

According to one embodiment, a semiconductor light emitting element includes: a support substrate; a bonding layer provided on the support substrate; an LED layer provided on the bonding layer; and a buffer layer softer than the bonding layer. The buffer layer is placed in one of between the support substrate and the bonding layer and between the bonding layer and the LED layer.

主权项

1. A semiconductor light emitting element comprising:
a support substrate; a first metal layer provided on the support substrate; a bonding layer provided on the first metal layer, the bonding layer consisting of an alloy containing a first component and a second component; a second metal layer provided on the bonding layer; an LED layer provided on the second metal layer; and a buffer layer containing the first component, the buffer layer being softer than the bonding layer, each of the first metal layer and the second metal layer including: a layer containing titanium, and a layer containing platinum; and the buffer layer being placed in one of between the support substrate and the first metal layer and between the second metal layer and the LED layer.