Semiconductor device with device separation structures

摘要

A semiconductor device includes a first gate electrode structure, a second gate electrode structure, a device separation structure, and cell separation structures. The first gate electrode structure is buried in a semiconductor portion in a first cell array at a distance to a first surface of the semiconductor portion. The first gate electrode structure includes parallel array stripes. The second gate electrode structure is buried in the semiconductor portion in a second cell array adjacent to the first cell array. The second gate electrode structure includes parallel array stripes. The device separation structure is between the first and second cell arrays. The device separation structure has a first width. The cell separation structures have at most a second width smaller than the first width and notching, at the first surface, semiconductor fins formed from sections of the semiconductor portion between the array trenches.

主权项

1. A semiconductor device, comprising:
a first gate electrode structure buried in a semiconductor portion in a first cell array at a distance to a first surface of the semiconductor portion, the first gate electrode structure including parallel array stripes; a second gate electrode structure buried in the semiconductor portion in a second cell array adjacent to the first cell array, the second gate electrode structure including parallel array stripes; a device separation structure between the first and second cell arrays, the device separation structure having a first width; and cell separation structures having at most a second width smaller than the first width and notching, at the first surface, semiconductor fins formed from sections of the semiconductor portion between the array trenches.