Nonvolatile memory device with layout to minimize void formation and method of making the same

摘要

A memory device can include an array of NOR memory cells, each memory cell including a floating gate, a source on a source side of the floating gate, a drain on a drain side of the floating gate, a drain contact on the drain, and a source contact on the source. The source contacts are connected to a common source line. A plurality of bit lines are connected to respective drains in a column of the memory cells. A plurality of word lines, each word line coupled to respective floating gates in a row of the memory cells. Spacing between the word lines on the drain side is greater than spacing between the word lines on the source side.

主权项

1. A memory device, comprising:
an array of NOR memory cells, each NOR memory cell including a floating gate, a source on a source side of the floating gate, a drain on a drain side of the floating gate, a drain contact on the drain, and a discrete source contact on the source, wherein the source contact is connected to a common source line; bit lines, each bit line connecting each of the drains in a column of the NOR memory cells; and word lines, each word line coupled to each of the floating gates in a row of the NOR memory cells, wherein spacing between one of the word lines on the drain side is greater than spacing between one of the word lines on the source side.