| 发明名称 | Semiconductor device and method of forming vertical structure | ||
| 摘要 | According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure. | ||
| 申请公布号 | US9318447(B2) | 申请公布日期 | 2016.04.19 |
| 申请号 | US201414334724 | 申请日期 | 2014.07.18 |
| 申请人 | Taiwan Semiconductor Manufacturing Company Limited | 发明人 | Peng Chih-Tang;Huang Tai-Chun;Tsai Teng-Chun;Lin Cheng-Tung;Chen De-Fang;Wang Li-Ting;Wang Chien-Hsun;Lin Huan-Just;Lu Yung-Cheng;Lee Tze-Liang |
| 分类号 | H01L21/336;H01L29/739;H01L23/00;H01L21/02;H01L29/423;H01L29/78 | 主分类号 | H01L21/336 |
| 代理机构 | Jones Day | 代理人 | Jones Day |
| 主权项 | 1. A method of forming a vertical structure with at least two barrier layers, comprising: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; forming a first interlayer dielectric over the first barrier layer corresponding to the source of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure. | ||
| 地址 | Hsinchu TW | ||