发明名称 Formation of carbon-rich contact liner material
摘要 Conductive contact structure of a circuit structures and methods of fabrication thereof are provided. The fabrication includes, for instance, providing at least one contact opening disposed over a semiconductor substrate; forming a carbon-rich contact liner material having a set carbon content conformally within the at least one contact opening disposed over the semiconductor substrate.
申请公布号 US9318440(B2) 申请公布日期 2016.04.19
申请号 US201514799116 申请日期 2015.07.14
申请人 GLOBALFOUNDRIES INC. 发明人 Cao Huy;Srivathanakul Songkram;Liu Huang;Derderian Garo Jacques;Alperson Boaz
分类号 H01L21/4763;H01L23/532;H01L21/768 主分类号 H01L21/4763
代理机构 Heslin Rothenberg Farley and Mesiti PC 代理人 Heslin Rothenberg Farley and Mesiti PC ;Mesiti Nicholas
主权项 1. A method comprising: fabricating a conductive contact structure, the fabricating comprising: providing at least one contact opening disposed over a semiconductor substrate; andcreating a conformal carbon-rich contact liner material having a set carbon content therein within the at least one contact opening disposed over the semiconductor substrate.
地址 Grand Cayman KY