发明名称 |
Formation of carbon-rich contact liner material |
摘要 |
Conductive contact structure of a circuit structures and methods of fabrication thereof are provided. The fabrication includes, for instance, providing at least one contact opening disposed over a semiconductor substrate; forming a carbon-rich contact liner material having a set carbon content conformally within the at least one contact opening disposed over the semiconductor substrate. |
申请公布号 |
US9318440(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201514799116 |
申请日期 |
2015.07.14 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Cao Huy;Srivathanakul Songkram;Liu Huang;Derderian Garo Jacques;Alperson Boaz |
分类号 |
H01L21/4763;H01L23/532;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
Heslin Rothenberg Farley and Mesiti PC |
代理人 |
Heslin Rothenberg Farley and Mesiti PC ;Mesiti Nicholas |
主权项 |
1. A method comprising:
fabricating a conductive contact structure, the fabricating comprising:
providing at least one contact opening disposed over a semiconductor substrate; andcreating a conformal carbon-rich contact liner material having a set carbon content therein within the at least one contact opening disposed over the semiconductor substrate. |
地址 |
Grand Cayman KY |