Semiconductor device and method of manufacturing same

摘要

In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a first semiconductor substrate having a first surface and a second surface opposite the first surface, a first insulating film formed on the first surface, a first hole formed in the first insulating film and partially extending into the first semiconductor substrate, a second hole formed in the second surface, a first electrode entirely filling the first hole, and a conductive film conformally formed in the second hole. The conductive film is electrically connected to a bottom surface of the first electrode and leaves a third hole in the first semiconductor substrate open. The third hole is configured to receive a second electrode of a second semiconductor substrate.

主权项

1. A semiconductor device comprising:
a first semiconductor substrate having a first surface and a second surface opposite the first surface; a first insulating film formed on the first surface; a first hole formed in the first insulating film and partially extending into the first semiconductor substrate; a second hole formed in the second surface; a single-piece first electrode entirely filling the first hole and comprising a portion that extends above the first insulating film, the portion being shaped to be inserted into a fourth hole of a third semiconductor substrate; a pad formed between the first insulating film and the first electrode; and a conductive film conformally formed in the second hole, the conductive film being electrically connected to a bottom surface of the first electrode and leaving a third hole in the first semiconductor substrate open, the third hole being configured to receive a second electrode of a second semiconductor substrate; wherein the second hole does not reach the pad.