Mitigation of write errors in multi-level cell flash memory through adaptive error correction code decoding

摘要

An apparatus includes a controller and an adaptive error correction code decoder. The controller may be configured to read data from and write data to a memory device. The controller may be further configured to write data in a two-step process, which includes (i) after writing data to a least significant bit (LSB) page, checking the data stored in the LSB page using a first strength error correction code (ECC) decoding process and (ii) after writing data to a most significant bit (MSB) page associated with the LSB page, checking the data stored in both the LSB and MSB pages using a second strength error correction code (ECC) decoding process.

主权项

1. An apparatus comprising:
a control circuit configured to read data from and write data to a memory configured to store two or more bits per cell; and an adaptive strength error correction code (ECC) decoder enabled to perform a plurality of different strength error correction code (ECC) decoding processes, wherein (i) after writing data to a least significant bit (LSB) page in the memory, the control circuit checks the data stored in the LSB page using a first strength error correction code (ECC) decoding process of the adaptive strength error correction code (ECC) decoder, and (ii) after writing data to a most significant bit (MSB) page associated with the LSB page in the memory, the control circuit checks the data stored in both the LSB and MSB pages using a second strength error correction code (ECC) decoding process of the adaptive strength error correction code (ECC) decoder.