发明名称 |
Negative electrode material for non-aqueous electrolyte secondary battery, negative electrode active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery |
摘要 |
There is provided a negative electrode material for non-aqueous electrolyte secondary batteries, the negative electrode material being a silicon oxide represented by the composition formula, SiOx, containing silicon and silicon oxide, in which x satisfies the relation of 0.1≦x≦0.8; the silicon oxide contains crystalline silicon; among the particles of crystalline silicon having a diameter of 1 nm or greater, the proportion by number of particles having a diameter of 100 nm or less is 90% or greater; and the BET specific surface area of the silicon oxide is larger than 100 m2/g. |
申请公布号 |
US9318737(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201313774169 |
申请日期 |
2013.02.22 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Essaki Kenji;Fukasawa Takayuki;Morita Tomokazu;Osada Noikazu;Hotta Yasuyuki;Kuboki Takashi;Hiraoka Toshiro |
分类号 |
H01M4/58;H01M4/134;H01M4/133;H01M4/36;H01M4/62;H01M4/04;H01M4/02 |
主分类号 |
H01M4/58 |
代理机构 |
Ohlandt, Greeley, Ruggiero & Perle, L.L.P. |
代理人 |
Ohlandt, Greeley, Ruggiero & Perle, L.L.P. |
主权项 |
1. A negative electrode material for non-aqueous electrolyte secondary batteries, comprising a silicon oxide represented by the composition formula, SiOx that includes crystalline silicon and silicon oxide,
wherein x satisfies the relation of 0.1≦x≦0.8; the silicon oxide includes the crystalline silicon; wherein the crystalline silicon has a first number of particles having a diameter of 1 nm or greater, the crystalline silicon has a second number of particles having a diameter of 1 nm or greater and 100 nm or less, and the second number is 90% or more of the first number or; the BET specific surface area of the silicon oxide is larger than 100 m2/g; and where: d16% is a diameter of 16% cumulative volume fraction of the silicon oxide and d84% is a diameter of 84% cumulative volume fraction of the silicon oxide in the form of particles; and a deviation in diameter of particles expressed as (d84%−d16%)/(2*average size of the silicon oxide particles), is 1.0 or less. |
地址 |
Minato-ku, Tokyo JP |