Semiconductor device and method for manufacturing semiconductor device

摘要

A semiconductor device according to one embodiment includes a semiconductor substrate, a back-gate layer formed above the semiconductor substrate, and a stacked body formed above the back-gate layer and comprising a plurality of insulating layers alternately formed between a plurality of electrode layers. The lowermost electrode layer of the plurality of electrode layers contains metal, and remaining electrode layers of the plurality of electrode layers other than the lowermost electrode layer do not contain the metal. Furthermore, the semiconductor device includes a pair of columnar semiconductor layers penetrating the stacked body and a semiconductor layer connecting lower portions of the pair of columnar semiconductor layers, the semiconductor layer embedded in the surface of the back-gate layer.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a back-gate layer formed above the semiconductor substrate; a stacked body formed above the back-gate layer, the stacked body including a plurality of insulating layers alternately formed between a plurality of electrode layers, wherein a lowermost electrode layer of the plurality of electrode layers contains a metal and remaining electrode layers of the plurality of electrode layers other than the lowermost electrode layer do not contain the metal of the lowermost electrode layer; a pair of columnar semiconductor layers penetrating the stacked body; and a semiconductor layer connecting lower portions of the pair of columnar semiconductor layers, the semiconductor layer embedded in a surface of the back-gate layer.