发明名称 Method of forming a plurality of bumps on a substrate and method of forming a chip package
摘要 A method of forming a plurality of bump structures on a substrate includes forming an under bump metallurgy (UBM) layer on the substrate, wherein the UBM layer contacts metal pads on the substrate. The method further includes forming a photoresist layer over the UBM layer, wherein the photoresist layer defines openings for forming the plurality of bump structures. The method further includes plating a plurality of layers in the openings, wherein the metal layers are part of the plurality of bump structures. The method further includes planarizing the plurality of bump structures after the metal layers are plated to a targeted height from a surface of the substrate.
申请公布号 US9318455(B2) 申请公布日期 2016.04.19
申请号 US201414151855 申请日期 2014.01.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Lin Jing-Cheng;Tsai Po-Hao
分类号 H01L23/00;H01L21/56;H01L23/498;H01L25/065;H01L23/14;H01L21/48 主分类号 H01L23/00
代理机构 Hauptman Ham, LLP 代理人 Hauptman Ham, LLP
主权项 1. A method of forming a plurality of bump structures on a substrate, comprising: forming an under bump metallurgy (UBM) layer on the substrate, wherein the UBM layer contacts metal pads on the substrate; forming a photoresist layer over the UBM layer, wherein the photoresist layer defines openings for forming the plurality of bump structures; plating a plurality of layers in each opening of the openings, wherein the layers are part of the plurality of bump structures, wherein a height of the plurality of layers in a corresponding opening of the openings varies from a center of the substrate to an edge of the substrate; and planarizing the plurality of bump structures after the layers are plated to a targeted height from a surface of the substrate.
地址 TW