Photomask and method for forming dual STI structure by using the same

摘要

In a method for manufacturing a dual shallow trench isolation structure, a substrate is provided, and a mask layer is formed on the substrate. The mask layer is patterned by using a photomask to form at least one first hole and at least one second hole in the mask layer, in which a depth of the at least one first hole is different from a depth of the at least one second hole. The mask layer and the substrate are etched to form at least one first trench having a first depth and at least one second trench having a second depth, in which the first depth is different from the second depth. The remaining mask layer is removed. A first isolation layer and A second isolation layer are respectively formed in the at least one first trench and the at least one second trench.

主权项

1. A method for manufacturing a dual shallow trench isolation structure, the method comprising:
forming a photomask with a variable transparency stacking substrate, wherein the variable transparency stacking substrate comprises at least one first transparent region and at least one second transparent region, and transparency through a recess portion of the at least one first transparent region is different from transparency through a recess portion of the at least one second transparent region; providing a substrate; forming a photoresist layer on the substrate; performing an exposure and development process on the photoresist layer by using the photomask to form at least one first hole and at least one second hole in the photoresist layer, the at least one first hole and the at least one second hole corresponding to the at least one first transparent region and the at least one second transparent region respectively, wherein a depth of the at least one first hole is different from a depth of the at least one second hole; etching the photoresist layer and the substrate to form at least one first trench having a first depth and at least one second trench having a second depth, wherein the first depth is different from the second depth; removing the remaining photoresist layer; and forming a first isolation layer and a second isolation layer respectively in the at least one first trench and the at least one second trench.