发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (Pt)-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component. |
申请公布号 |
US9318338(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201313969616 |
申请日期 |
2013.08.19 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
Liao Bor-Shyang;Tsai Tsung-Hsun;Lai Kuo-Chih;Chen Pin-Hong;Hsu Chia-Chang;Huang Shu-Min;Cheng Min-Chung;Lin Chun-Ling |
分类号 |
H01L21/322;H01L21/283;H01L21/28;H01L29/78;H01L21/8238;H01L21/285 |
主分类号 |
H01L21/322 |
代理机构 |
|
代理人 |
Tan Ding Yu |
主权项 |
1. A method for fabricating a semiconductor device, the method comprising steps of:
providing a substrate having a nitride layer and a platinum (Pt)-containing nickel (Ni)-semiconductor compound layer, wherein the substrate has an active zone and a non-active zone, a first gate structure and a source/drain region disposed in the active zone, a second gate structure disposed in the non-active zone, and the step of providing the substrate having the nitride layer and the Pt-containing Ni semiconductor compound layer comprises:
forming the nitride layer as being a second spacer on a sidewall of the second gate structure and as being a patterned hard mask to expose a source/drain region on the substrate; andforming the Pt-containing Ni semiconductor compound layer on the source/drain region; and in situ removing the nitride layer and platinum (Pt) atoms from the platinum (Pt)-containing nickel (Ni) semiconductor compound layer with a chemical solution including a sulfuric acid component and a phosphoric acid component. |
地址 |
Hsinchu TW |