| 发明名称 | Semiconductor structure with low-melting-temperature conductive regions, and method of repairing a semiconductor structure | ||
| 摘要 | A semiconductor structure includes at least a semiconductor body, a delimiting structure delimiting a cup-shaped recess in the body and a conductive region in the recess. The conductive region is made of a low-melting-temperature material, having a melting temperature lower than that of the materials forming the delimiting structure. | ||
| 申请公布号 | US9318313(B2) | 申请公布日期 | 2016.04.19 |
| 申请号 | US201313869124 | 申请日期 | 2013.04.24 |
| 申请人 | STMicroelectronics S.r.l. | 发明人 | Pagani Alberto;Ziglioli Federico Giovanni |
| 分类号 | H01L29/40;H01L21/00;H01L21/02;H01L21/66;H01L23/00;H01L25/065;H01L23/544 | 主分类号 | H01L29/40 |
| 代理机构 | Gardere Wynne Sewell LLP | 代理人 | Gardere Wynne Sewell LLP |
| 主权项 | 1. A structure, comprising: a semiconductor first layer configured to be solid at a temperature; a region disposed adjacent to the semiconductor first layer and configured to be solid at the temperature; an exposed recess disposed in the region; and a coupling pad having a heating element, the coupling pad disposed in the exposed recess and including a first conductive portion configured to be molten at the temperature. | ||
| 地址 | Agrate Brianza IT | ||