| 摘要 |
In terms of a multi-patterning method, mask size controllability is enhanced. According to one embodiment of the present invention, a manufacturing process for forming a silicon oxidized layer on a first mask and a reflection prevention layer is performed. In this process, plasma of first gas including halogenated silicon gas and plasma of second gas including oxygen gas are alternately formed. In addition, one area of the silicon oxidized layer is removed to remain the other region only which is formed on a side surface of the first mask. Subsequently, the first mask is eliminated, and the reflection prevention layer and an organic layer are etched. |
