METHOD OF CONTROLLING ETCH PROCESS FOR FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE

摘要

The present invention relates to an etching process control method for forming a fine pattern of a semiconductor device. The etching process control method comprises the steps of: forming a lower pattern having a plurality of openings on a substrate; acquiring a line-width value of the lower pattern; and controlling a processing condition of an etching process for forming the lower pattern by using the line-width value. Accordingly, a contact failure between fine particles of the semiconductor device may be ameliorated.