| 摘要 |
An assembly structure of high-power semiconductors and heat sink includes a high-power semiconductor module and a heat sink. The high-power semiconductor module includes a printed circuit board, and high-power semiconductor components provided on the surfaces of the printed circuit board. The heat sink includes at least two primary heat-dissipating fins. The high-power semiconductor module is disposed between two adjacent primary heat-dissipating fins. A plurality of gap-filling layers are provided between the high-power semiconductor module and the primary heat-dissipating fins, and the gap-filling layers are tightly fitted on surfaces of the primary heat-dissipating fins. |
