摘要 |
SYSTEMS AND METHODS FOR THE PRODUCTION OF POLYSILICON OR ANOTHER MATERIAL VIA CHEMICAL VAPOR DEPOSITION IN A REACTOR ARE PROVIDED IN WHICH GAS IS DISTRIBUTED USING A SILICON STANDPIPE (42). THE SILICON STANDPIPE (42) CAN BE ATTACHED TO THE REACTOR SYSTEM (10) USING A NOZZLE COUPLER (25) SUCH THAT PRECURSOR GASES MAY BE INJECTED TO VARIOUS PORTIONS OF THE REACTION CHAMBER (12). AS A RESULT, GAS FLOW CAN BE IMPROVED THROUGHOUT THE REACTOR CHAMBER (12), WHICH CAN INCREASE THE YIELD OF POLYSILICON, IMPROVE THE QUALITY OF POLYSILICON, AND REDUCE THE CONSUMPTION OF ENERGY. |