| 摘要 |
Provided is a method for making a semiconductor device wherein a cured adhesive layer that is excellent in bonding property and in conductivity can be formed without occurrence of voids in the cured adhesive layer. In a method for making a semiconductor device by using thermocompression bonding equipment to thermocompression-bond together a semiconductor chip having solder bumps and a semiconductor board having electrode pads with an interlayer filler composition intervening therebetween, the bonding is performed on temperature condition that the temperatures of the head and stage of the thermocompression bonding equipment are in a range defined, in a graph having an ordinate axis representative of the head temperature and having an abscissa axis representative of the stage temperature, by the following four equations: H + 1.9S = 590 Equation 1, H + 0.526S = 310 Equation 2, H + 0.8S = 580 Equation 3, H + 1.25S = 725 Equation 4, where H is the head temperature (centigrade) and S is the stage temperature (centigrade). |
