发明名称 |
RECESSED TRANSISTORS CONTAINING FERROELECTRIC MATERIAL |
摘要 |
Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an interior of the first insulative structure, and a ferroelectric structure lines an interior of the first conductive structure. A second conductive structure is within a lower region of the ferroelectric structure, and the second conductive structure has an uppermost surface beneath an uppermost surface of the first conductive structure. A second insulative structure is over the second conductive structure and within the ferroelectric structure. A pair of source/drain regions are adjacent an upper region of the first insulative structure and are on opposing sides of the first insulative structure from one another. |
申请公布号 |
WO2016057097(A1) |
申请公布日期 |
2016.04.14 |
申请号 |
WO2015US39480 |
申请日期 |
2015.07.08 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
RAMASWAMY, DURAL, VISHAK NIRMAL |
分类号 |
H01L27/115;H01L21/8247;H01L29/78 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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