ORGANIC SEMICONDUCTOR THIN FILM PRODUCTION METHOD

摘要

A raw material solution (6), in which an organic semiconductor material is dissolved in a solvent, is supplied to a substrate (1). The solvent is evaporated so that crystals of the organic semiconductor material are precipitated. Thus, an organic semiconductor thin film (7) is formed on the substrate (1). An edge forming member (2) having a contact face (2a) on one side is used and located opposite the substrate (1) so that the plane of the contact face (2a) intersects the surface of the substrate (1) at a predetermined angle. The raw material solution (6) is supplied to the substrate (1) and formed into a droplet (6a) that comes into contact with the contact face (2a). The substrate (1) and the edge forming member (2) are moved relative to each other in a direction parallel to the surface of the substrate (1) so as to separate the edge forming member (2) from the droplet (6a), and while the raw material solution (6) is supplied so that a change in size of the droplet (6a) with the relative movement is maintained within a predetermined range, the solvent contained in the droplet (6a) is evaporated to form the organic semiconductor thin film (7) on the substrate (1) after the contact face (2a) has been moved. In this manner, a large-area organic semiconductor single crystal thin film having high charge mobility can be manufactured by a simple process using a solvent evaporation method based on droplet formation.

主权项

1. A method for manufacturing an organic semiconductor thin film, comprising:
supplying a raw material solution, in which an organic semiconductor material is dissolved in a solvent, to a substrate; evaporating the solvent so that crystals of the organic semiconductor material are precipitated; and forming an organic semiconductor thin film on the substrate, wherein the method uses an edge forming member having a contact face on one side, the edge forming member is located opposite the substrate so that a plane of the contact face intersects a surface of the substrate at a predetermined angle, the raw material solution is supplied to the substrate and formed into a droplet that comes into contact with the contact face, the substrate and the edge forming member are moved relative to each other in a direction parallel to the surface of the substrate so as to separate the edge forming member from the droplet, and while the raw material solution is supplied, the solvent contained in the droplet is evaporated and crystals of the organic semiconductor material are continuously precipitated on the substrate after the contact face has been moved in accordance with the supply of the raw material solution, and in the precipitation process, a supply rate of the raw material solution and a speed of the relative movement are adjusted in accordance with a vapor rate of the solvent, so that a size of the droplet in the direction of the relative movement is maintained within a predetermined range in which an effect of defining a direction of growth of the crystals is obtained via an attachment of the droplet to the contact face.