METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR

摘要

A method for manufacturing a thin-film transistor (1) having an oxide semiconductor layer (40), the method including: a step (S30) for introducing a prescribed process gas and performing sputtering, thereby forming an oxide semiconductor film (40a) such that the carrier density exceeds a prescribed first value; and a step (S40) for performing an annealing treatment or a plasma treatment in an oxidizing atmosphere such that the carrier density of the oxide semiconductor film (40a) is at or below the first value.