发明名称 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element and a semiconductor element manufacturing method, which can curb time degradation.SOLUTION: A semiconductor element 1 is manufactured by a manufacturing method which comprises: a process of forming on a semiconductor laminate 22, a first insulation film 23 composed of a silicon oxide; a process of forming on the first insulation film 23, a second insulation film 24 composed of a silicon nitride; a process of forming a heater 25 on the second insulation film 24; and a process of forming on the heater 25, a third insulation film 26 composed of a silicon nitride.SELECTED DRAWING: Figure 2
申请公布号 JP2016054168(A) 申请公布日期 2016.04.14
申请号 JP20140178404 申请日期 2014.09.02
申请人 SUMITOMO ELECTRIC IND LTD;SUMITOMO ELECTRIC DEVICE INNOVATIONS INC 发明人 KIMURA DAISHI;HASEGAWA TARO;TAGUCHI TOSHIYUKI
分类号 H01S5/026;G02B6/122;H01S5/062 主分类号 H01S5/026
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