发明名称 |
SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element and a semiconductor element manufacturing method, which can curb time degradation.SOLUTION: A semiconductor element 1 is manufactured by a manufacturing method which comprises: a process of forming on a semiconductor laminate 22, a first insulation film 23 composed of a silicon oxide; a process of forming on the first insulation film 23, a second insulation film 24 composed of a silicon nitride; a process of forming a heater 25 on the second insulation film 24; and a process of forming on the heater 25, a third insulation film 26 composed of a silicon nitride.SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016054168(A) |
申请公布日期 |
2016.04.14 |
申请号 |
JP20140178404 |
申请日期 |
2014.09.02 |
申请人 |
SUMITOMO ELECTRIC IND LTD;SUMITOMO ELECTRIC DEVICE INNOVATIONS INC |
发明人 |
KIMURA DAISHI;HASEGAWA TARO;TAGUCHI TOSHIYUKI |
分类号 |
H01S5/026;G02B6/122;H01S5/062 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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