发明名称 SOLAR CELL SURFACE PASSIVATION USING PHOTO-ANNEAL
摘要 A surface of a silicon substrate is passivated. A silicon oxide layer is formed on a first surface of a silicon substrate. An aluminum oxide layer is formed on the silicon oxide layer. A hydrogenated amorphous silicon nitride layer is formed on the aluminum oxide layer. A high intensity light source illuminates the silicon surface, the silicon oxide layer, the aluminum oxide layer, and the hydrogenated amorphous silicon nitride layer.
申请公布号 WO2016019396(A3) 申请公布日期 2016.04.14
申请号 WO2015US43507 申请日期 2015.08.03
申请人 SOLEXEL, INC. 发明人 DESHPANDE, ANAND;TSAI, MEGAN;SEUTTER, SEAN, S.;KAPUR, PAWAN;MOSLEHI, MEHRDAD, M.
分类号 H01L31/0392;H01L31/04;H01L31/18 主分类号 H01L31/0392
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