发明名称 |
SOLAR CELL SURFACE PASSIVATION USING PHOTO-ANNEAL |
摘要 |
A surface of a silicon substrate is passivated. A silicon oxide layer is formed on a first surface of a silicon substrate. An aluminum oxide layer is formed on the silicon oxide layer. A hydrogenated amorphous silicon nitride layer is formed on the aluminum oxide layer. A high intensity light source illuminates the silicon surface, the silicon oxide layer, the aluminum oxide layer, and the hydrogenated amorphous silicon nitride layer. |
申请公布号 |
WO2016019396(A3) |
申请公布日期 |
2016.04.14 |
申请号 |
WO2015US43507 |
申请日期 |
2015.08.03 |
申请人 |
SOLEXEL, INC. |
发明人 |
DESHPANDE, ANAND;TSAI, MEGAN;SEUTTER, SEAN, S.;KAPUR, PAWAN;MOSLEHI, MEHRDAD, M. |
分类号 |
H01L31/0392;H01L31/04;H01L31/18 |
主分类号 |
H01L31/0392 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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