| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a nonvolatile memory in which the memory size of a data area and the memory size of a code area can freely be changed.SOLUTION: A semiconductor device according to one embodiment comprises a nonvolatile memory 6 that can switch between a reference current reading method by which current flowing through a read target memory cell MC1 and reference current are compared to read data, and a complementary reading method by which current flowing through the first and second memory cells MC1, MC2 storing read target complementary data therein are compared to read data.SELECTED DRAWING: Figure 6 |
