BONDING PROCESS FOR A CHIP BONDING TO A THIN FILM SUBSTRATE

摘要

A bonding process for a chip bonded to a thin film substrate is disclosed. The thin film substrate has a thickness of about less than 500 um. Curvature occurs in the thin film substrate due to Coefficient of Temperature Expansion (CTE) mismatch for different materials between the dielectric material and the embedded circuitry, where cooling and heating is applied during fabrication. A temporary carrier is prepared for the thin film substrate to paste, a flatten process is applied by a roller thereon so that the curvature of the thin film substrate can be eliminated and facilitated for of chips to be bonded thereto.

主权项

1. A bonding process for a chip bonded to a thin film substrate, comprises:
preparing a thin film substrate which has curvature, the thin film substrate has a plurality of top pads and has a plurality of bottom pads; a density of the top pads is higher than a density of the bottom pads; preparing a temporary carrier; applied adhesive layer on a top surface of the temporary carrier; pasting the thin film substrate on a top surface of the adhesive layer; and flattening the thin film substrate.