| 发明名称 |
METHODS OF FORMING SUBSTRATE MICROVIAS WITH ANCHOR STRUCTURES |
| 摘要 |
Methods of forming anchor structures in package substrate microvias are described. Those methods and structures may include forming a titanium layer in an opening of a package substrate using a first deposition process, wherein the opening comprises an undercut region, and wherein the first conductive layer does not substantially form in an anchor region of the undercut region. The titanium layer may then be re-sputtered using a second deposition process, wherein the titanium layer is formed in the anchor region. |
| 申请公布号 |
US2016104679(A1) |
申请公布日期 |
2016.04.14 |
| 申请号 |
US201514969406 |
申请日期 |
2015.12.15 |
| 申请人 |
Intel Corporation |
发明人 |
Boyapati Sri Ranga Sai;Zhang Qinglei |
| 分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a structure comprising:
forming a first conductive layer in an opening of a package substrate using a first deposition process, wherein the opening comprises an undercut region, and wherein the first conductive layer does not substantially form in an anchor region of the undercut region; and re-sputtering the first conductive layer using a second deposition process, wherein the first conductive layer is formed in the anchor region. |
| 地址 |
Santa Clara CA US |
