发明名称 |
SEMICONDUCTOR STRUCTURE INCLUDING A LAYER OF A FIRST METAL BETWEEN A DIFFUSION BARRIER LAYER AND A SECOND METAL AND METHOD FOR THE FORMATION THEREOF |
摘要 |
A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first metal is deposited over the semiconductor structure. An electroless deposition process is performed. The electroless deposition process removes a first portion of the layer of first metal from the semiconductor structure and deposits a first layer of a second metal over the semiconductor structure. An electroplating process is performed. The electroplating process deposits a second layer of the second metal over the first layer of second metal. A second portion of the layer of first metal remains in the semiconductor structure. |
申请公布号 |
US2016104638(A1) |
申请公布日期 |
2016.04.14 |
申请号 |
US201414512850 |
申请日期 |
2014.10.13 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Preusse Axel;Liske Romy;Wislicenus Marcus;Krause Robert;Gerlich Lukas;Uhlig Benjamin;Bott Sascha |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
providing a semiconductor structure comprising a recess, said recess comprising at least one of a contact via and a trench; depositing a layer of a first metal over said semiconductor structure; performing an electroless deposition process, said electroless deposition process removing a first portion of said layer of said first metal from said semiconductor structure and depositing a first layer of a second metal over said semiconductor structure; and performing an electroplating process, said electroplating process depositing a second layer of said second metal over said first layer of said second metal; wherein a second portion of said layer of said first metal remains in said semiconductor structure. |
地址 |
Grand Cayman KY |