| 发明名称 |
In-Ce-O-BASED SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME |
| 摘要 |
[Object] To provide: an In—Ce—O-based sputtering target capable of suppressing nodules and abnormal discharge over a long period, even though the Ce content based on an atomic ratio of Ce/(In+Ce) is 0.16 to 0.40, at which a high-refractive-index film can be obtained; and a method for producing the In—Ce—O-based sputtering target. [Solving Means] The sputtering target is an In—Ce—O-based sputtering target which is made of an In—Ce—O-based oxide sintered body containing indium oxide as a main component and cerium, and which is used in producing a transparent conductive film having a refractive index of 2.1 or more. The target is characterized in that the Ce content based on the atomic ratio of Ce/(In+Ce) is 0.16 to 0.40, and that cerium oxide particles having a particle diameter of 5 μm or less are dispersed in the In—Ce—O-based oxide sintered body. |
| 申请公布号 |
US2016104608(A1) |
申请公布日期 |
2016.04.14 |
| 申请号 |
US201414892653 |
申请日期 |
2014.03.25 |
| 申请人 |
SUMITOMO METAL MINING CO., LTD. |
发明人 |
SATO Keiichi |
| 分类号 |
H01J37/34;B22F9/04;B22F9/02;C23C14/34;B22F3/16 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An In—Ce—O-based sputtering target comprising an In—Ce—O-based oxide sintered body containing indium oxide as a main component and cerium, for use in producing a transparent conductive film having a refractive index of 2.1 or more, characterized in that
a Ce content based on an atomic ratio of Ce/(In+Ce) is 0.16 to 0.40, and cerium oxide particles having a particle diameter of 5 μm or less are dispersed in the In—Ce—O-based oxide sintered body. |
| 地址 |
Tokyo JP |
