发明名称 |
METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON WAFER |
摘要 |
A manufacturing method of a single crystal uses a single-crystal pull-up apparatus includes: adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ·cm to 0.9 mΩ·cm; subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm2 or less. |
申请公布号 |
US2016102418(A1) |
申请公布日期 |
2016.04.14 |
申请号 |
US201414785756 |
申请日期 |
2014.04.15 |
申请人 |
SUMCO TECHXIV CORPORATION |
发明人 |
NARUSHIMA Yasuhito;KUBOTA Toshimichi;OGAWA Fukuo;UTO Masayuki |
分类号 |
C30B15/04;B28D5/00;C30B25/10;C30B29/06;C30B15/20;C30B25/18 |
主分类号 |
C30B15/04 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of a single crystal using a single-crystal pull-up apparatus comprising a chamber, a crucible disposed in the chamber and adapted to receive a dopant-added melt in which red phosphorus is added to a silicon melt, and a pull-up portion that is configured to pull up a seed crystal after the seed crystal is brought into contact with the dopant-added melt, the method comprising:
adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ·cm to 0.9 m∩·cm; subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm2 or less. |
地址 |
Nagasaki JP |