发明名称 |
SINGLE CRYSTAL SUBSTRATE, SINGLE CRYSTAL SUBSTRATE WITH CRYSTALLINE FILM, CRYSTALLINE FILM, METHOD OF MANUFACTURING SINGLE CRYSTAL SUBSTRATE WITH CRYSTALLINE FILM, METHOD OF MANUFACTURING CRYSTALLINE SUBSTRATE, AND ELEMENT MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal substrate for epitaxial growth where a crystalline film having stress suppressed or eliminated can be formed, a single crystal substrate with the crystalline film, a crystalline film, a method of manufacturing the single crystal substrate with the crystalline film, a method of manufacturing a crystalline substrate, and an element manufacturing method.SOLUTION: There is provided a method of: staining a region 1b in at least a part of a top surface of a single crystal substrate 1 used for formation of a crystalline film formed through epitaxial growth; forming a single crystalline film 2a on an unstained surface 1a, which is not stained, through epitaxial growth; forming a crystalline film 2b having less crystallinity than the single crystalline film on the stained surface 1b of the single crystal substrate through epitaxial growth; and forming a single crystal substrate with a crystalline film from the crystalline film 2 composed of at least the single crystalline film and the crystalline film having less crystallinity than the single crystalline film and from the single crystal substrate 1.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016052984(A) |
申请公布日期 |
2016.04.14 |
申请号 |
JP20150170395 |
申请日期 |
2015.08.31 |
申请人 |
NAMIKI PRECISION JEWEL CO LTD |
发明人 |
AIDA HIDEO;AOTA NATSUKO |
分类号 |
C30B33/00;C30B25/18;C30B29/38;H01L21/205;H01L21/304;H01L33/12;H01L33/22;H01L33/32 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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