发明名称 |
INTEGRATED RESONATOR WITH A MASS BIAS |
摘要 |
An integrated resonator apparatus includes a piezoelectric resonator and an acoustic Bragg reflector formed adjacent the piezoelectric resonator. The integrated resonator apparatus also includes a mass bias formed over the Bragg reflector on a side of the piezoelectric resonator opposite the piezoelectric resonator. |
申请公布号 |
US2016105156(A1) |
申请公布日期 |
2016.04.14 |
申请号 |
US201514970676 |
申请日期 |
2015.12.16 |
申请人 |
Texas Instruments Incorporated |
发明人 |
BURGESS Byron Neville;KRENIK William Robert;JACOBSEN Stuart M. |
分类号 |
H03H3/02 |
主分类号 |
H03H3/02 |
代理机构 |
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代理人 |
|
主权项 |
1. A method of forming a piezoelectric resonator with a Bragg reflector, comprising:
depositing alternating dielectric layers of lower and higher acoustic impedance materials over a substrate; depositing a first resonator electrode over the alternating dielectric layers; depositing a piezoelectric layer over the first resonator electrode; depositing a second resonator electrode over the piezoelectric layer; depositing a mass bias over the resonators; and encapsulating the mass bias, first and second electrodes, piezoelectric layer, and alternating dielectric layers with a plastic. |
地址 |
Dallas TX US |