发明名称 INTEGRATED RESONATOR WITH A MASS BIAS
摘要 An integrated resonator apparatus includes a piezoelectric resonator and an acoustic Bragg reflector formed adjacent the piezoelectric resonator. The integrated resonator apparatus also includes a mass bias formed over the Bragg reflector on a side of the piezoelectric resonator opposite the piezoelectric resonator.
申请公布号 US2016105156(A1) 申请公布日期 2016.04.14
申请号 US201514970676 申请日期 2015.12.16
申请人 Texas Instruments Incorporated 发明人 BURGESS Byron Neville;KRENIK William Robert;JACOBSEN Stuart M.
分类号 H03H3/02 主分类号 H03H3/02
代理机构 代理人
主权项 1. A method of forming a piezoelectric resonator with a Bragg reflector, comprising: depositing alternating dielectric layers of lower and higher acoustic impedance materials over a substrate; depositing a first resonator electrode over the alternating dielectric layers; depositing a piezoelectric layer over the first resonator electrode; depositing a second resonator electrode over the piezoelectric layer; depositing a mass bias over the resonators; and encapsulating the mass bias, first and second electrodes, piezoelectric layer, and alternating dielectric layers with a plastic.
地址 Dallas TX US