FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD OF MANUFACTURING SAME

摘要

A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes providing a semiconductor substrate; forming a first fin structure and a second fin structure over the semiconductor substrate; forming a gate structure over a portion of the first and second fin structures, such that the gate structure traverses the first and second fin structures; epitaxially growing a first semiconductor material on exposed portions of the first and second fin structures, such that the exposed portions of the first and second fin structures are merged together; and epitaxially growing a second semiconductor material over the first semiconductor material.

主权项

1. A integrated circuit device comprising:
a first fin and a second fin disposed over a semiconductor substrate; an isolation structure disposed between the first and second fins, such that the first and second fins are isolated from each other; a gate structure disposed over a portion of the first and second fins, the gate structure traversing the first and second fins, thereby separating a source region and a drain region of the first and second fins; a first semiconductor layer disposed over another portion of the first and second fins; and a second semiconductor layer disposed over the first semiconductor layer, wherein the source and drain regions of the first and second fins include a portion of the first and second semiconductor layers, wherein the second semiconductor layer is an epitaxial semiconductor layer.