Precise Critical Dimension Control Using Bilayer ALD

摘要

Methods for self-aligned multiple patterning including controlled slimming of features during spacer layer deposition. Multiple spacer layer deposition process conditions produce a balance between controlling the damage to the features and increasing production throughput.

主权项

1. A processing method comprising:
providing a substrate having a photoresist with features thereon, each of the features having a top, sidewalls and a width; depositing up to 10 layers of a spacer film using a first process condition to decrease the width of the photoresist features; depositing additional spacer film using a second process condition to form a spacer film having a total thickness less than about 50 nm etching the spacer film from the top of the photoresist features leaving the spacer film on the sidewalls of the features; removing the photoresist to leave the spacer film from the sidewalls of the features and expose portions of the substrate; and etching the exposed portions of the substrate to form adjacent pairs of substrate features.