| 摘要 |
The present invention relates to a thin film solar cell. The thin film solar cell to suppress interface recombination comprises: a light absorption layer formed of a GaAs-based material; a first window layer formed on the light absorption layer, formed of a compound semiconductor including aluminum (Al); a second window layer interposed between the first window layer and the light absorption layer, and formed of a compound semiconductor which does not contain Al; a back surface field (BSF) layer formed under the light absorption layer; and a substrate formed under the BSF layer. As such, in accordance with the present invention, a new second window layer is interposed between the window layer and the light absorption layer to improve a characteristic of an interface recombination rate; thereby preventing a current loss such that the efficiency of the solar cell is able to be improved. |
