| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device eliminating the need of refresh operation and being capable of suppressing a leakage current of a memory cell, and further to provide a driving method thereof.SOLUTION: A semiconductor storage device has a memory cell including: two MOS transistors having sources connected to source potential supply ends and constituting a flip-flop; and two access transistors having sources connected to bit lines and ON/OFF controlled by potential of word lines. The semiconductor storage device has a source potential adjustment circuit switching a first voltage and a second voltage subjected to voltage adjustment and supplying the first voltage or the second voltage to the source potential supply ends in response to a mode changeover signal performing changeover of a holding state mode holding data and an operation state mode performing reading or writing of the data. The semiconductor storage device is provided with a word line potential adjustment circuit switching a voltage applied to the word lines between a third voltage and a fourth voltage subjected to the voltage adjustment and supplying the third voltage or the fourth voltage to the word lines in response to the mode changeover signal.SELECTED DRAWING: Figure 1 |
