RESISTIVE RANDOM ACCESS MEMORY DEVICE HAVING A NANO-SCALE TIP, MEMORY ARRAY USING THE SAME AND FABRICATION METHOD THEREOF

摘要

The present invention relates to a resistive random access memory device having a nano-scale tip, memory array using the same and fabrication method thereof. Especially, the present invention provides a technique forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate in order that an electric field is focused on the tip of the bottom electrode across a top electrode and that a region where conductive filaments are formed is maximally minimized or localized.

主权项

1. A resistive random access memory device comprising:
a bottom electrode formed in a first direction by etching a semiconductor substrate, the bottom electrode having an upwardly protruding tapered tip structure; an interlayer insulating film formed on the bottom electrode, the interlayer insulating film wrapping around the tip structure except for an upper part of the tip structure; a resistance change layer formed on the upper part of the tip structure and the interlayer insulating film; and a top electrode formed on the resistance change layer in a second direction across the bottom electrode over the tip structure.