| 摘要 |
The present invention relates to a producing method of substrate growth graphene, and substrate growth graphene. The producing method of substrate growth graphene comprises the steps of: (1) heating a copper layer (metal layer) at about 700 to 800°C; and (2) removing oxide of a metal surface by supplying tens of sccm of hydrogen and applying hydrogen plasma before growing graphene, as an additional option. |
