| 发明名称 |
Zero-Dimensional Electron Devices and Methods of Fabricating the Same |
| 摘要 |
A semiconductor device comprises a substrate and quantum dots, wherein a peak emission of the quantum dots has a FWHM of less than 20 meV when the semiconductor is measured at a temperature of 4 Kelvin. |
| 申请公布号 |
US2016104777(A1) |
申请公布日期 |
2016.04.14 |
| 申请号 |
US201514967261 |
申请日期 |
2015.12.11 |
| 申请人 |
Chang Yu-Chen |
发明人 |
Chang Yu-Chen |
| 分类号 |
H01L29/12;H01L29/20;H01L33/32;H01L33/04;H01L33/12;H01L33/30;H01L29/15;H01L29/207 |
主分类号 |
H01L29/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; and doped quantum dots disposed on the substrate. |
| 地址 |
New Taipei TW |
