发明名称 |
SEMICONDUCTOR APPARATUS |
摘要 |
There is provided a semiconductor apparatus comprising: a first switching element formed of a wide band gap semiconductor; and a second switching element formed of another wide band gap semiconductor and connected in parallel with the first switching element; wherein the first switching element and the second switching element respectively include a control electrode, a first main electrode and a second main electrode, and respectively have an output capacitance characteristic in which an output capacitance decreases as a voltage between the first main electrode and the second main electrode increases, and the output capacitance characteristics of the first switching element and the second switching element or threshold voltages for respectively turning on/off the first switching element and the second switching element are different from each other. |
申请公布号 |
US2016104699(A1) |
申请公布日期 |
2016.04.14 |
申请号 |
US201514831386 |
申请日期 |
2015.08.20 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
YAMAMOTO Kazunari |
分类号 |
H01L27/02;H01L27/088 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor apparatus comprising:
a first switching element formed of a wide band gap semiconductor; and a second switching element formed of another wide band gap semiconductor and connected in parallel with the first switching element; wherein the first switching element and the second switching element respectively include a control electrode, a first main electrode and a second main electrode, and respectively have an output capacitance characteristic in which an output capacitance decreases as a voltage between the first main electrode and the second main electrode increases, and the output capacitance characteristics of the first switching element and the second switching element or threshold voltages for respectively turning on/off the first switching element and the second switching element are different from each other. |
地址 |
Toyota-shi JP |