发明名称 EXCIMER LASER ANNEALING APPARATUS AND METHOD OF USING THE SAME
摘要 An excimer laser annealing apparatus and the method thereof are disclosed. The apparatus has a substrate holder and an excimer laser unit. The substrate holder has a support surface for supporting a substrate having an amorphous silicon film and a thermoregulating module. The thermoregulating module is used to regulate the temperature on the support surface so as to control crystal orientation of amorphous silicon in the amorphous silicon film. With the thermoregulating module being added, the excimer laser annealing apparatus can control the orientation of recrystallizing of the amorphous silicon.
申请公布号 US2016104617(A1) 申请公布日期 2016.04.14
申请号 US201414406280 申请日期 2014.10.16
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 YAO Jiangbo
分类号 H01L21/02;H01S3/041;H01L29/04;H01L21/67;H01L29/16;H01S3/225;H01L29/66 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of using an excimer laser annealing apparatus to perform annealing, wherein the excimer laser annealing apparatus includes a substrate holder and an excimer laser unit, wherein the substrate holder has a support surface for supporting a substrate having an amorphous silicon film and a thermoregulating module for regulating the temperature on the support surface so as to control crystal orientation of amorphous silicon in the amorphous silicon film, wherein the thermoregulating module is constituted by at least two light-absorbing components and at least two light-reflecting components mounted on the support surface, wherein the light-absorbing components and the light-reflecting components are embedded in the substrate holder; and the excimer laser unit is used to irradiate excimer laser beams onto the substrate; wherein the method of using an excimer laser annealing apparatus to perform annealing comprises steps of: providing the substrate having an amorphous silicon film on the substrate holder; and using the excimer laser unit to perform an annealing treatment on the amorphous silicon film so that the amorphous silicon of the amorphous silicon film recrystallizes along a thermoregulating direction of the thermoregulating module in a predetermined area to form a polysilicon film, wherein the predetermined area is an area of the amorphous silicon film which corresponds to the position of the thermoregulating module.
地址 Guangdong CN