| 发明名称 |
NICKEL PHOSPHOROUS CMP COMPOSITIONS AND METHODS |
| 摘要 |
A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP. |
| 申请公布号 |
US2016102227(A1) |
申请公布日期 |
2016.04.14 |
| 申请号 |
US201514881837 |
申请日期 |
2015.10.13 |
| 申请人 |
Cabot Microelectronics Corporation |
发明人 |
ZHANG Ke;PALANISAMY CHINNATHAMBI Selvaraj |
| 分类号 |
C09G1/02;B24B37/11 |
主分类号 |
C09G1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate, the composition comprising a suspension of about 1 to about 20 percent by weight (wt %) of colloidal silica particles and about 0.3 to about 10 wt % of fused silica particles in an acidic aqueous carrier comprising a primary oxidizing agent that includes hydrogen peroxide; wherein the concentration of the fused silica particles is not more than about 100% of the concentration of the colloidal silica particles. |
| 地址 |
Aurora IL US |
