| 摘要 |
The present invention is provided with a substrate (10), and a first thin film transistor (1) and a second thin film transistor (2), which are disposed on the substrate (10). The first thin film transistor (1) is provided with a first gate electrode (21), and a first oxide semiconductor layer (41) used as a channel, the second thin film transistor (2) is provided with a second gate electrode (22), and a second oxide semiconductor layer (42) used as a channel, and a first oxide semiconductor material constituting the first oxide semiconductor layer (41) has a mobility that is different from that of a second oxide semiconductor material constituting the second oxide semiconductor layer (42). |
