| 发明名称 |
Improving the Strength of Micro-Bump Joints |
| 摘要 |
A device includes a work piece including a metal bump; and a dielectric layer having a portion directly over the metal bump. The metal bump and a surface of the portion of the dielectric layer form an interface. A metal finish is formed over and contacting the metal bump. The metal finish extends from over the dielectric layer to below the interface. |
| 申请公布号 |
US2016104685(A1) |
申请公布日期 |
2016.04.14 |
| 申请号 |
US201514976927 |
申请日期 |
2015.12.21 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Shen Wen-Wei;Chen Chen-Shien;Kuo Chen-Cheng;Chen Ming-Fa;Wang Rung-De |
| 分类号 |
H01L23/00;H01L25/00;H01L25/065 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bump structure comprising:
a metal pad; a passivation layer over the metal pad, the passivation layer having an opening exposing a portion of the metal pad; and a metal bump over the metal pad, the metal bump having a lip extending laterally beneath a lowermost surface of the passivation layer, the lip anchoring the metal bump to the passivation layer. |
| 地址 |
Hsin-Chu TW |
