发明名称 |
COMPOSITION FOR FORMING A COATING TYPE SILICON-CONTAINING FILM, SUBSTRATE, AND METHOD FOR FORMING PATTERNS |
摘要 |
The present invention is directed to providing a composition for forming a coating type silicon-containing film, which shows excellent adhesion to a micropattern, and allows easy wet etching with a stripper solution causing no damage on a semiconductor substrate or a coating type organic film or carbon-based CVD film required for a patterning process. The composition for forming a coating type silicon-containing film has at least one silicic acid-based structure represented by Formula (1), and at least one silicon-based structure represented by Formula (2), and further comprises a linkage between the units represented by Formula (2). |
申请公布号 |
KR20160040436(A) |
申请公布日期 |
2016.04.14 |
申请号 |
KR20150139388 |
申请日期 |
2015.10.02 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
TACHIBANA SEIICHIRO;TANEDA YOSHINORI;KIKUCHI RIE;OGIHARA TSUTOMU |
分类号 |
C09D183/04;C09D183/14;G03F7/11;H01L21/033;H01L21/205;H01L21/306 |
主分类号 |
C09D183/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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