发明名称 COMPOSITION FOR FORMING A COATING TYPE SILICON-CONTAINING FILM, SUBSTRATE, AND METHOD FOR FORMING PATTERNS
摘要 The present invention is directed to providing a composition for forming a coating type silicon-containing film, which shows excellent adhesion to a micropattern, and allows easy wet etching with a stripper solution causing no damage on a semiconductor substrate or a coating type organic film or carbon-based CVD film required for a patterning process. The composition for forming a coating type silicon-containing film has at least one silicic acid-based structure represented by Formula (1), and at least one silicon-based structure represented by Formula (2), and further comprises a linkage between the units represented by Formula (2).
申请公布号 KR20160040436(A) 申请公布日期 2016.04.14
申请号 KR20150139388 申请日期 2015.10.02
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 TACHIBANA SEIICHIRO;TANEDA YOSHINORI;KIKUCHI RIE;OGIHARA TSUTOMU
分类号 C09D183/04;C09D183/14;G03F7/11;H01L21/033;H01L21/205;H01L21/306 主分类号 C09D183/04
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