SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can improve flatness of an interlayer insulation film without correcting a mask pattern which is already designed.SOLUTION: A semiconductor device of an embodiment comprises: a process of forming a processed film on a semiconductor substrate; a process of forming a resist pattern on the processed film by using photolithography; a process of forming a dummy pattern on the processed film where there exists little resist pattern by using a three-dimensional modeling device; a process of etching the processed film by using the resist pattern and the dummy pattern as masks; a process of removing the resist pattern and the dummy pattern; a process of forming an interlayer insulation film on the semiconductor substrate; and a process of flattening the interlayer insulation film.SELECTED DRAWING: Figure 10