TRI-GATE DEVICES AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a semiconductor body having a top surface and sidewalls on both right and left sides formed on a substrate, and to provide a method for manufacturing the semiconductor device.SOLUTION: A gate dielectric layer 322 is formed on a top surface of a semiconductor body 308 and on sidewalls on both right and left sides of the semiconductor body 308. A gate electrode 324 is formed on a gate dielectric 322 on the top surface of the semiconductor body 308 and is formed adjacently to the gate dielectric 322 on the sidewalls on both the right and left sides of the semiconductor body 308.SELECTED DRAWING: Figure 3