| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can reduce the number of times of a light exposure and developing processing step for impurity implantation.SOLUTION: The method of manufacturing semiconductor device includes the following steps of: forming implantation masks 410 and 420 that extend in a first direction Z, in a first region 511 of a semiconductor substrate; forming a first trench 150 and a second trench 160 that extend in the first direction Z and are adjacent in a second direction X crossing the first direction, on both sides of the implantation masks; implanting impurities at least to an inner wall 151 at the second trench side, of the inner walls of the first trench 150, by using the implantation masks as a mask; and implanting impurities at least to an inner wall 161 at the first trench side, of the inner walls of the second trench 160, by using the implantation masks as a mask. At the steps of implanting impurities, the implantation masks have such a height H11 that, when the impurities are implanted to one of the first trench 150 and the second trench 160, the impurities are prevented from being implanted to the other trench.SELECTED DRAWING: Figure 15 |
