| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of achieving low defect density and low resistivity in a p-type silicon carbide single crystal.SOLUTION: A production method of a semiconductor device includes steps for: preparing a raw material 2 containing silicon carbide, aluminum and boron; and growing a P-type SiC single crystal 4 containing aluminum and boron from the prepared raw material 2, on an N-type SiC seed crystal 1 containing nitrogen. A nitrogen concentration in the N-type SiC seed crystal 1, and an aluminum concentration and a boron concentration in the P-type SiC single crystal 4 satisfy a relational expression determined beforehand.SELECTED DRAWING: Figure 1 |
