| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can ensure a joint strength and dielectric strength voltage and reduce the device outer size.SOLUTION: A semiconductor device comprises: terminal aggregation parts 31-33 which are arranged in a longitudinal direction on a part protruded from a bottom face of a case 1 in a manner such that aperture planes of the terminal aggregation parts 31-33 are located above circuit formation regions A-F on a surface side of the case 1; and wiring terminal boards 4a-4c are pulled out to the terminal aggregation parts 31-33 and arranged adjacent to each other. The wiring terminal boards 4a-4c are connected with one ends of external connection terminal boards 5a-5c which are formed integrally with a lid 5 by laser welding and subsequently the welded part is encapsulated by a second mold resin part by an insulating resin such as gel and epoxy. By doing this, even when a terminal junction area in the terminal aggregation parts 31-33 or an interval between a junction parts is small, a joint strength of the joint part can he increased and dielectric strength voltage can be ensured.SELECTED DRAWING: Figure 1 |
